elektronische bauelemente SMG2322N 2.5a, 30v, r ds(on) 85 m ? n-channel enhancement mosfet 12-apr-2011 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. sc-59 top view a l c b d g h j f k e 1 2 3 1 2 3 rohs compliant product a suffix of ?-c? specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe sc-59 saves board space. ? fast switching speed. ? high performance trench technology. application dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. package information package mpq leadersize sc-59 3k 7? inch absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v t a =25c 2.5 continuous drain current 1 t a =70c i d 2 a pulsed drain current 2 i dm 10 a continuous source current (diode conduction) 1 i s 0.46 a t a =25c 1.25 power dissipation 1 t a =70c p d 0.8 w operating junction and st orage temperature range t j , t stg -55~150 c thermal resistance rating t Q 5 sec 150 maximum junction to ambient 1 steady-state r ja 200 c/w notes: 1. surface mounted on 1? x 1? fr4 board. 2. pulse width limited by maximum junction temperature. millimete r millimete r ref. min. max. ref. min. max. a 2.70 3.10 g 0.10 re f . b 2.25 3.00 h 0.40 ref. c 1.30 1.70 j 0.10 0.20 d 1.00 1.40 k 0.45 0.55 e 1.70 2.30 l 0.85 1.15 f 0.35 0.50
elektronische bauelemente SMG2322N 2.5a, 30v, r ds(on) 85 m ? n-channel enhancement mosfet 12-apr-2011 rev. b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition static gate-threshold voltage v gs(th) 1 1.5 3 v v ds =v gs , i d =250 a gate-body leakage i gss - 4 100 na v ds =0, v gs =8v - - 1 v ds =16v, v gs =0 zero gate voltage drain current i dss - - 10 a v ds =20v, v gs =0, t j =55c on-state drain current 1 i d(on) 6 - - a v ds =5v, v gs =4.5v - 62 85 v gs =10v, i d =2.5a drain-source on-resistance 1 r ds(on) - 102 125 m ? v gs =4.5v, i d =1.7a forward transconductance 1 g fs - 3.5 - s v ds =5v, , i d =3a diode forward voltage v sd - 0.65 - v i s =0.46a, v gs =0 dynamic 2 total gate charge q g - 3.5 7 gate-source charge q gs - 0.8 2 gate-drain charge q gd - 1.0 2 nc i d =2.5a v ds =10v v gs =4.5v input capacitance c iss - 720 1500 output capacitance c oss - 165 400 reverse transfer capacitance c rss - 60 200 pf v ds =15v v gs =0 f=1mhz turn-on delay time td (on) - 10 20 rise time t r - 13 30 turn-off delay time td (off) - 14 30 fall time t f - 4 20 ns i d =1a, v dd =10v v gen =4.5v r g =6 ? notes: 1. pulse test pw Q 300 us duty cycle Q 2%. 2. guaranteed by design, not s ubject to production testing.
elektronische bauelemente SMG2322N 2.5a, 30v, r ds(on) 85 m ? n-channel enhancement mosfet 12-apr-2011 rev. b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
elektronische bauelemente SMG2322N 2.5a, 30v, r ds(on) 85 m ? n-channel enhancement mosfet 12-apr-2011 rev. b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curve
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